Manufacturing apparatus

ABSTRACT

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation application of InternationalApplication No. PCT/JP2011/006757, filed Dec. 2, 2011, which claims thebenefit of Japanese Patent Application No. 2010-293522, filed Dec. 28,2010. The contents of the aforementioned applications are incorporatedherein by reference in their entireties.

TECHNICAL FIELD

The present invention relates to a manufacturing apparatus, andparticularly relates to a manufacturing apparatus of a multi-layeredthin film which is preferable for a manufacturing process of a deviceapplying a multi-layered thin film, such as a magnetic reproducing headof a magnetic disk drive apparatus, a storage element of a magneticrandom access memory, a magneto-resistance element used for a magneticsensor, a storage element of a semiconductor memory or the like.

BACKGROUND ART

A conventional film-forming apparatus of a multi-layered thin film has aconfiguration in which one sputtering deposition chamber includessputtering cathodes in a number equal to or more than the number of filmtypes in a multi-layered thin film (refer to Patent Literature 1), or aconfiguration of a so-called cluster system including plural sputteringdeposition chambers each including plural sputtering cathodes (refer toPatent Literature 2).

In another configuration, a cluster system includes sputteringdeposition chambers each including one sputtering cathode, at least in anumber equal to the number of film types in a multi-layered thin film(refer to Patent Literature 3).

Further, as still another configuration, there is disclosed a sputteringapparatus for depositing a multi-layered film including amagneto-resistance element over a substrate, using a sputteringapparatus including a first vacuum chamber 110 having one target 116 ainstalled therein, a second vacuum chamber 112 having four targets 116b, 116 c, 116 d and 116 e installed therein, and a transfer chamber 114coupling these two vacuum chambers 110 and 112, as shown in FIG. 8(refer to Patent Literature 4).

Further, as still another configuration, there will be explained asputtering system 600 which is disclosed in Patent Literature 5, by theuse of FIG. 9. The sputtering system 600 of FIG. 9 includes a firstsingle-target DC magnetron sputtering module 604, a multi-target DCsputtering module 606, a multi-target ion-beam sputtering module 608,and a second single-target DC magnetron sputtering module 610. A loadlock 616 enables ingress and egress of a wafer. A control panel 614controls a parameter and process of the sputtering system 600.

First, by the use of FIG. 10, there will be explained a spin valvesensor 300 which is fabricated by the use of the sputtering system 600described in FIG. 9. The spin valve sensor 300 described in FIG. 10includes a substrate 302, a bottom shield layer 311 (Ni—Fe film), abottom gap layer 304 (Al₂O₃ film), multiple seed layers 306 (first seedlayer: Al₂O₃ film, second seed layer: Ni—Cr—Fe film, and third seedlayer: Ni—Fe film), an anti-ferromagnetic pinning layer 308 (Pt—Mnfilm), a Co—Fe film 310, a Ru film 312, a Co—Fe film 314, a spacer layer316 (Cu (Cu—O) film), a Co—Fe film 318, a Ni—Fe film 320, a cap layer322 (Al (Al—O) film), an upper gap layer 324 (Al₂O₃ film), and an uppershield layer (Ni—Fe film) 325. Here, FIG. 10 shows that a ferromagnetismsensing layer 307 (called “free layer”) is separated from aferromagnetic pinned layer 309 by the spacer layer 316. In the spinvalve sensor 300 shown in FIG. 10, magnetization of the pinned layer 309is confined by exchange coupling with an anti-ferromagnetic film calleda pinning layer, and magnetization of another ferromagnetic film calleda “sensing” layer or a “free” layer 307 is not fixed and rotates freelyin response to a magnetic field (signal magnetic field) from a recordedmagnetic medium.

Next, by the use of the sputtering system 600 described in FIG. 9, therewill be explained a method of fabricating the spin valve sensor 300.First, the bottom gap layer 304 is formed over a wafer in the firstsingle-target DC magnetron sputtering module 604. After that, forstacking the multiple seed layers 306, the wafer is transferred into thesecond single-target DC magnetron sputtering module 610, and the firstseed layer Al₂O₃ film is stacked. After that, for stacking the secondseed layer Ni—Fe—Cr film and the third seed layer Ni—Fe film, the waferis transferred into the multi-target ion-beam sputtering module 608 andthe Ni—Cr—Fe film and the Ni—Fe film are stacked respectively. Afterthat, the wafer is transferred into the multi-target DC magnetronsputtering module 606 for stacking the remaining layers of the spinvalve sensor. The remaining layers include the Pt—Mn film 308, the Co—Fefilm 310, the Ru film 312, the Co—Fe film 314, the Cu (Cu—O) film 316,the Co—Fe film 318, the Ni—Fe film 320, and the Al (Al—O) film 322.After stacking thereof, the wafer is annealed and a Ta film is stacked.

CITATION LIST Patent Literature

PTL 1: Japanese Patent Application Laid-Open No. 2002-167661

PTL 2: Japanese Patent Application Laid-Open No. H08-239765

PTL 3: Japanese Patent Application Laid-Open No. 2007-311461

PTL 4: Japanese Patent Application Laid-Open No. 2000-269568

PTL 5: Japanese Patent Application Laid-Open No. 2003-158313

SUMMARY OF INVENTION

In a recent multi-layered thin film application device, in addition toincrease in the number of stacked layers, there is a trend of using filmthicknesses different in an order of magnitude among films forming amulti-layered thin film, and combining a metal film, an insulating film,and a semiconductor film.

In a case of forming such a multi-layered thin film by a cluster-typemanufacturing apparatus which includes plural sputtering depositionchambers each including plural sputtering cathodes (Patent Literature 1and Patent Literature 2), a time for sputter-forming a film having athickness thicker in a different order of magnitude or for an oxide filmhaving a sputtering rate lower in a different order of magnitude in themulti-layered thin film becomes longer than a time for forming anotherthin film, and this has been a cause of limiting throughput of amanufacturing apparatus. In particular, when forming a film including asingle element, there has been a problem also in a footprint becauseonly one of plural sputtering cathodes functions.

Further, for a case of a multi-layered thin film formed by combining ametal film, an insulating film, and a semiconductor film using themanufacturing apparatus described in Patent Literature 1 or PatentLiterature 2, there has been a problem of so-called interlayer crosscontamination that device characteristics are degraded considerably whenthe metal film is mixed into the insulating film or the semiconductorfilm.

On the other side, in the cluster-type manufacturing apparatus includingthe sputtering deposition chambers each including one sputteringcathode, at least in a number equal to the number of film types in amulti-layered thin film (Patent Literature 3), the interlayer crosscontamination can be avoided. However, since the number of sputteringdeposition chambers needs to be increased, the size of a manufacturingapparatus is increased, and therefore there has been a problem of costincrease, footprint increase, and energy consumption increase. Further,in the manufacturing apparatus described in Patent Literature 3, therehas been a problem that a film containing plural elements cannot beformed.

Moreover, in the sputtering apparatus described in Patent Literature 4,when one multi-layered thin film includes plural layers of the same filmtype, a substrate is transferred twice to the same process chamber in aseries of film deposition processes because a sputtering target is notprovided for each layer. That is, when a magneto-resistance effect filmincluding Ta/NiFe/CoFeB/Cu/CoFeB/PdPtMn/Ta is formed by the use of thesputtering apparatus which is described in Patent Literature 4 and shownin FIG. 8, a substrate is transferred twice to the first vacuum chamber110 as follows. First, a Ta film is formed on a substrate surface bysputtering using Ta as a target in the first vacuum chamber 110, thesubstrate is transferred into the second vacuum chamber 112, and then aNiFe film, a CoFeB film, a Cu film, a PdPtMn film are formed bysputtering using NiFe, CoFeB, Cu, PdPtMn as targets. After that, thesubstrate needs to be transferred into the first vacuum chamber 110again for the purpose of forming a Ta film on the substrate surface bysputtering using Ta as a target in the first vacuum chamber 110. In thismanner, for the case of the sputtering apparatus described in PatentLiterature 4, a substrate is transferred into the same process chambertwice in a series of the film deposition processes and therefore therehas been a problem in throughput. Moreover, there has been a problemthat so-called sequential substrate transfer cannot be realized.

Further, in the sputtering system 600 of Patent Literature 5 shown inFIG. 9, a wafer is transferred into the first single-target DC magnetronsputtering module 604, the second single-target DC magnetron sputteringmodule 610, the multi-target ion-beam sputtering module 608, and themulti-target DC sputtering module 606, in this order, and the spin valvesensor 300 described in FIG. 11 is fabricated. Accordingly, thesputtering system 600 of Patent Literature 5 realizes so-calledsequential substrate transfer, compared to the sputtering apparatusdescribed in Patent Literature 4.

In the sputtering system 600 of Patent Literature 5, however, filmdepositions from the anti-ferromagnetism pinning layer 308 (Pt—Mn film)to the cap layer 322 (Al (Al—O) film) in the spin valve sensor 300 areperformed in the multi-target DC sputtering module 606.

Typically, in the spin valve sensor 300, the film thickness (10 to 20nm) of the anti-ferromagnetic pinning layer 308 (Pt—Mn film) is oneorder larger than, the film thicknesses of other layers, for example,the Co—Fe film 318 (1 to 5 nm). Accordingly, a film deposition time(also called “takt time”) in the multi-target DC sputtering module 606is considerably long compared to film deposition times in the firstsingle-target DC magnetron sputtering module 604, the secondsingle-target DC magnetron sputtering module 610, and the multi-targetion-beam sputtering module 608. Throughput is determined by a substratework quantity which can be processed in a unit time (takt time).Accordingly, even when the takt time is short in each of the firstsingle-target DC magnetron sputtering module 604, the secondsingle-target DC magnetron sputtering module 610, and the multi-targetion-beam sputtering module 608, the throughput is determined by the takttime of the multi-target DC sputtering module 606 if the takt time ofthe multi-target DC sputtering module 606 is longer. As a result, thesputtering system 600 of Patent Literature 5 still has a problem in thethroughput.

The present invention aims at providing a manufacturing apparatus whichcan realize so-called sequential substrate transfer and improvethroughput even when one multi-layered thin film includes plural layersof the same film type.

For achieving such a purpose, one aspect of the present invention is amanufacturing apparatus that grows a multi-layered film over asubstrate, and includes: a transfer chamber including a substratetransfer mechanism; a first sputtering deposition chamber including onesputtering cathode; a second sputtering deposition chamber including onesputtering cathode; a third sputtering deposition chamber including onesputtering cathode; a fourth sputtering deposition chamber including twoor more sputtering cathodes; a fifth sputtering deposition chamberincluding two or more sputtering cathodes; and a process chamber forperforming a process other than sputtering, wherein the first sputteringdeposition chamber, the second sputtering deposition chamber, the thirdsputtering deposition chamber, the fourth sputtering deposition chamber,the fifth sputtering deposition chamber, and the process chamber arearranged around the transfer chamber so that each is able to performdelivery and receipt of the substrate with the transfer chamber.

According to the present invention, the first sputtering depositionchamber including one sputtering cathode, the second sputteringdeposition chamber including one sputtering cathode, the thirdsputtering deposition chamber including one sputtering cathode, thefourth sputtering deposition chamber including two or more sputteringcathodes, the fifth sputtering deposition chamber including two or moresputtering cathodes, and the process chamber for performing a processother than sputtering are arranged around the transfer chamber.Accordingly, even when one multi-layered thin film includes plurallayers of the same film type, it is possible to realize so-calledsequential substrate transfer and to improve throughput.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a configuration diagram showing a first example of amulti-layered thin film manufacturing apparatus according to anembodiment of the present invention.

FIG. 2 is a configuration diagram showing an example of a sputteringdeposition chamber including plural sputtering cathodes according to anembodiment of the present invention.

FIG. 3 is a configuration diagram showing an example of a sputteringdeposition chamber including one sputtering cathode according to anembodiment of the present invention.

FIG. 4 is a configuration diagram showing an example of a sputteringdeposition chamber which mounts a sputtering cathode so as to make asputtering target surface substantially parallel to a substrate surfaceaccording to an embodiment of the present invention.

FIG. 5 is a film composition diagram of a tunnel magneto-resistanceelement which is fabricated by the use of a manufacturing apparatusaccording to an embodiment of the present invention.

FIG. 6 is a configuration diagram showing a second example of amulti-layered thin film manufacturing apparatus according to anembodiment of the present invention.

FIG. 7 is a configuration diagram showing an internal structure of aprocess chamber which can be applied to an embodiment of the presentinvention.

FIG. 8 is a configuration diagram showing an example of a conventionalmulti-layered thin film manufacturing apparatus (Patent Literature 4).

FIG. 9 is a configuration diagram showing an example of a conventionalmulti-layered thin film manufacturing apparatus (Patent Literature 5).

FIG. 10 is a configuration diagram showing an example of a spin valvesensor which is fabricated by a conventional multi-layered thin filmmanufacturing apparatus (Patent Literature 5).

DESCRIPTION OF EMBODIMENTS

There will be explained a multi-layered film manufacturing apparatusaccording to an embodiment of the present invention by the use of thedrawings.

FIG. 1 is a configuration diagram showing a first example of amulti-layered thin film manufacturing apparatus according to anembodiment of the present invention. The manufacturing apparatus of FIG.1 is suitable to improve throughput while maintaining a low cost, andfurther to suppress device characteristic degradation by preventing orreducing interlayer cross contamination, in forming a multi-layered thinfilm.

A feature of the manufacturing apparatus of the present invention isthat a process chamber for performing a process other than sputtering(etching chamber 14), a first sputtering deposition chamber includingone sputtering cathode (sputtering deposition chamber 13A), a secondsputtering deposition chamber including one sputtering cathode(sputtering deposition chamber 13C), a third sputtering depositionchamber including one sputtering cathode (sputtering deposition chamber13E), a fourth sputtering deposition chamber including two or moresputtering cathodes (sputtering deposition chamber 13B), and a fifthsputtering deposition chamber including two or more sputtering cathodes(sputtering deposition chamber 13D) are arranged around a transferchamber including a substrate transfer mechanism. Here, in FIG. 1, thethree sputtering deposition chambers each including one sputteringcathode, the two sputtering deposition chambers each including two ormore sputtering cathodes, and the process chamber for performing aprocess other than sputtering are provided around the transfer chamberincluding the substrate transfer mechanism. As will be described below,it is necessary to provide three or more sputtering deposition chamberseach including one sputtering cathode, from the viewpoint of throughputimprovement.

In FIG. 1, the five sputtering deposition chambers 13A to 13E, theetching chamber 14 for removing oxide and contamination on a substrate25 surface by reverse sputtering etching, and two load lock chambers 15Aand 15B are connected to the transfer chamber 12 which includes twosubstrate transfer robots 11A and 11B as the substrate transfermechanism 11. Among the sputtering deposition chambers 13A to 13E, eachof 13A, 13C and 13E includes one sputtering cathode 31, and each of 13Band 13D includes five sputtering cathodes 31. Note that one substratetransfer robot may be used as the substrate transfer mechanism 11described in FIG. 1.

Each of all the above chambers and the load lock chambers 15A and 15Bpreferably has a vacuum pump for exhausting the chamber into vacuum, andthe chambers other than the load lock chambers 15A and 15B are alwaysmaintained in vacuum. Here, in all the embodiments to be describedbelow, all the chambers and the load lock chambers are assumed to havevacuum pumps.

The load lock chambers 15A and 15B are maintained to have the samepressure as an atmospheric pressure when the substrate 25 is brought infrom atmospheric air before process and when the substrate 25 is takenout to atmospheric air after the process. On the other side, the loadlock chambers 15A and 15B are exhausted into vacuum when the substrates25 disposed in the load lock chambers 15A and 15B are transferred intothe transfer chamber 12 which is exhausted into vacuum and when thesubstrate 25 is retrieved from the transfer chamber 12 after theprocess. The number of load lock chambers 15A and 15B may notnecessarily be two and may be one.

Gate valves 16 are provided between each of the sputtering depositionchamber 13A, the sputtering deposition chamber 13B, the sputteringdeposition chamber 13C, the sputtering deposition chamber 13D, thesputtering deposition chamber 13E, and the process chamber 14, and eachof the load lock chambers 15 a and 15B. Each of the gate valves 16 isclosed except when the substrate 25 is transferred. The substratetransfer robot 11 is configured to take out the substrate 25 from theload lock chamber 15A or 15B and transfer the substrate 25 into adesired chamber by an instruction from computer program.

In the sputtering deposition chamber 13B and the sputtering depositionchamber 13D each including the plural sputtering cathodes 31, the pluralsputtering cathodes 31 are disposed in each upper part of the sputteringdeposition chambers 13B and 13D as shown in FIG. 2. In each inside lowerpart of the sputtering deposition chambers 13B and 13D, a substratestage 33 is provided which is rotatable by a power source (not shown inthe drawing) provided outside the sputtering deposition chambers 13B and13D. The substrate 25 for thin film deposition is placed over thesubstrate stage 33 at least during film deposition. Each of thesputtering cathodes 31 includes a sputtering target 32 which is made ofa material corresponding to the film type of each layer forming amulti-layered thin film, and disposed at an angle so that the surface ofthe sputtering target 32 faces substantially in the center direction ofthe substrate stage 33 in FIG. 2. Note that the sputtering cathode 31 isnot necessarily disposed at an angle and may be disposed so that thesurface of the sputtering target 32 is substantially in parallel to thesubstrate 25 surface.

When a thin film is formed in this deposition chamber, DC or RF power isapplied to a desired sputtering cathode 31 preferably while thesubstrate stage 33 is being rotated, and the power is shut down when adesired film thickness is reached. A shutter may be disposed between thesubstrate 25 and the sputtering target 32, and the film thickness may becontrolled by open and close of the shutter while the power is beingapplied. When a multi-layered thin film is formed, the above filmforming operation may be performed sequentially while the substrate isplaced on the rotating substrate stage 33. Here, in FIG. 1, four kindsof target 31 are disposed in the sputtering deposition chamber 13B andthe materials thereof are PtMn, CoFe, Ru, and CoFeB. Further, the gatevalve 16 is provided on the side wall of the sputtering depositionchamber 13B via an O ring 34. Further, four kinds of target 31 aredisposed in the sputtering deposition chamber 13D and the materialsthereof are PtMn, CoFe, Ru, and CoFeB. Further, the gate valve 16 isprovided on the side wall of the vacuum chamber 13A via an O ring 34.

In the sputtering deposition chambers 13A, 13C and 13E each includingone sputtering cathode 31, as shown in FIG. 3, one sputtering cathodemay be only disposed in the sputtering deposition chamber includingplural sputtering cathodes and the same film forming operation may beperformed. Preferably, the sputtering cathode is placed to have a sizelarger than that of the sputtering cathode placed on the sputteringdeposition chamber including the plural sputtering cathodes in order toobtain a higher film deposition rate. Alternatively, as shown in FIG. 4,the sputtering cathode may be placed so that the surface of thesputtering target is substantially in parallel to the substrate surface.In this case, the substrate stage needs not be rotated in particular.Here, in FIG. 1, one kind of target 32 is disposed in the sputteringdeposition chamber 13A and the material thereof is a material capable offorming an oxide film, a nitride film, or a semiconductor film. Further,one kind of target 32 is disposed in the sputtering deposition chamber13C and the material thereof is a material capable of forming a metalfilm having a thickness not smaller than 10 nm. Further, one kind oftarget 32 is disposed in the sputtering deposition chamber 13E and thematerial thereof is a material capable of forming a metal film having athickness not smaller than 10 nm. Note that, in FIG. 1, a target formedby a material capable of forming a metal film having a thickness notsmaller than 10 nm may be disposed in the sputtering deposition chamber13A and a target formed by a material capable of forming an oxide film,a nitride film, or a semiconductor film may be disposed in either thesputtering deposition chamber 13C or the sputtering deposition chamber13E. That is, in at least one of the sputtering deposition chambers 13A,13C and 13E each including one sputtering cathode, a film having athickness larger than those of the other films (e.g., not smaller than10 nm) may be formed.

The process chamber 14 which performs a process other than sputteringdeposition is connected to the transfer chamber 12. As the processchamber 14, there can be employed a process chamber for removing a thinfilm formed on or over the substrate, with plasma, an ion beam, an atombeam, a molecular beam, and a gas Cluster beam. For other examples, asthe process chamber 14, there may be employed a process chamber forforming a thin film on the thin film formed on or over the substrate, bya chemical vapor deposition method, a process chamber for causing thethin film formed on or over the substrate to chemically react in gas,neutral active species, ions, or a mixed atmosphere thereof, or aprocess chamber for heating, cooling, or heating and cooling thesubstrate.

An internal structure of the process chamber 14 is shown in FIG. 7. Theprocess chamber 14 includes a vacuum chamber 21, and an upper electrode22 and a lower electrode are provided in this vacuum chamber 21. Theupper electrode 22 is earthed and the lower electrode 23 is connected toan RF power source (high frequency power source) 60 via a matching box24. A substrate 25 is placed on the lower electrode 23. Plasma 26 isgenerated between the upper electrode 22 and the lower electrode 23 whena plasma generation condition is established.

As a representative example of processing operation in the above processchamber 14, Ar gas of 0.075 Pa is introduced into the inside of thevacuum chamber 21, RF power of 15 W (0.029 W/cm² for a unit area) isapplied to the lower electrode 23 to generate the plasma 26, and plasmaprocessing is further performed under a condition that a substrate biasvoltage (Vdc) is a voltage included in a range smaller than 0 V and notsmaller than −300 V. The upper limit value of the substrate bias voltageis preferably −2 to −3 V, and the most preferable voltage is a voltageincluded in a range from −15 V to the upper limit value of the substratebias voltage. This voltage is a voltage capable of generating plasma.For the process gas to be introduced into the vacuum chamber 21, inertgas such as Kr, Xe, Ne or similar gas can be used instead of Ar. Processgas pressure in the process chamber 14 is set to be a low pressure in arange of 0.01 to 100 Pa.

Next, there will be explained embodiments of the present invention bythe use of the drawings.

First Embodiment

FIG. 5 is a film composition diagram of a tunnel magneto-resistanceelement (magneto-resistance multi-layered film) fabricated by the use ofa manufacturing apparatus according to an embodiment of the presentinvention. On a substrate 25, there is formed a stacked body including aTa layer 41, a PtMn layer 42, a CoFe layer 43, a Ru layer 44, a CoFeBlayer 45, an MgO layer 46, a CoFeB layer 47, a Ta layer 48, a Ru layer49, and a Ta layer 50. That is, over the substrate 25, the Ta layer 41is formed having a film thickness of 20 nm as a foundation layer,successively the PtMn layer 42 of anti-ferromagnetic material is formedhaving a film thickness of 15 nm, successively the CoFe layer 43 offerromagnetic material is formed having a film thickness of 2.5 nm, theRu layer 44 of non-magnetic material is formed having a film thicknessof 0.9 nm, the CoFeB layer 45 of ferromagnetic material is formed havinga film thickness of 3 nm, and the MgO layer 46 of oxide is formed havinga film thickness of 1.2 nm. Successively, the CoFeB layer 47 offerromagnetic material is formed again having a film thickness of 3 nm,the Ta layer 48 is formed thereover having a very small film thicknessof 1.5 nm, and then the Ru layer 49 and the Ta layer 50 are formedhaving film thickness of 10 nm and a film thickness of 50 nm,respectively. The bottom Ta film and the top Ta film 50 haveoutstandingly large thicknesses and secondarily the PtMn layer 42 andthe upper Ru layer 49 have large thicknesses. On the other side, for theCoFe layer 43 to the middle Ta layer 47, thin layers are stacked havingfilm thicknesses not larger than 3 nm per one layer. Further, only theMgO layer 46 is oxide. In FIG. 5, the Ta layer 41 functions as afoundation layer, the PtMn layer 42 functions as an anti-ferromagneticlayer, a stacked layer of the ferromagnetic CoFe layer 43, thenon-magnetic Ru layer 44, and the ferromagnetic CoFeB layer 45 functionsas a magnetization fixing layer, the MgO layer 46 functions as anon-magnetic insulating layer, the CoFeB layer 47 functions as amagnetization free layer, and a stacked layer of the Ta layer 48, the Rulayer 49, and the Ta layer 50 functions as a protection layer.

FIG. 1 shows a manufacturing apparatus suitable to improve throughputwhile maintaining a low cost and further to suppress devicecharacteristic degradation by preventing or reducing the interlayercross contamination, in the deposition of such a multi-layered thinfilm.

As described above, in FIG. 1, the three sputtering deposition chamberseach including one sputtering cathode, the two sputtering depositionchambers each including two or more sputtering cathodes and the oneprocess chamber for performing a process other than sputtering areprovided around the transfer chamber including the substrate transfermechanism. As will be described below, at least three sputteringdeposition chambers each including one sputtering cathode and at leasttwo sputtering deposition chambers each including two or more sputteringcathodes are necessary from the viewpoint of throughput improvement.

When the tunnel magneto-resistance element (magneto-resistancemulti-layered film) described in FIG. 5 is manufactured by the use ofthe apparatus of FIG. 1, a Ta target 32 is attached to each of thesputtering deposition chambers 13A and 13E and used for forming thebottom Ta film 41 and the top Ta film 47 each shown in FIG. 5. Foursputtering targets 32 of PtMn, CoFe, Ru and CoFeB are attached to thesputtering deposition chamber 13B and the remaining one sputteringcathode 31 is left vacant for backup. An MgO sintered target 32 isattached to the sputtering deposition chamber 13C. Three targets 32 ofCoFeB, Ta and Ru are attached to the sputtering deposition chamber 13D,and the remaining two sputtering cathodes 31 are left vacant for backup.

The reason why the sputtering target 32 is disposed for each layeralthough one multi-layered thin film includes plural layers of the samefilm type is to realize so-called sequential substrate transfer in whichthe substrate 25 is not transferred twice to the same process chamber ina series of the film deposition processes. That is, when plural layersof the same type are formed in different thicknesses, thinner one isformed by at least one of the three sputtering deposition chambers eachincluding one sputtering cathode and thicker one is formed by anotherdeposition chamber of the three sputtering deposition chambers.Accordingly, layers which are the same type but have differentthicknesses can be formed without the substrate being transferred twiceto the same sputtering deposition chamber. When such sequentialsubstrate 25 transfer is realized, process time bars of respectivesubstrates 25 can be overlapped in a process time bar graph forcontinuous processing of the plural substrates 25 and thereforethroughput is improved greatly. The gate valves 16 are provided betweeneach of the sputtering deposition chamber 13A to the sputteringdeposition chamber 13E, and the etching chamber 14, and each of the loadlock chambers 15A and 15B. Here, reference numeral 35 indicates aplacement stage for placing the substrate 25 temporarily when the twosubstrate transfer robots 11A and 11B receive and deliver the substrate25, and a position alignment mechanism of the substrate 25 and a notchalignment mechanism of the substrate 25 may be provided separately.

Following Table 1 shows a process time table in the apparatusconfiguration of FIG. 1.

TABLE 1 [sec] Pro- Process Takt cess Chamber Event time time 1 Transferchamber12 Wafer Transfer 10.0 10.0 2 Etching chamber14 Etching 80.0 80.03 Transfer chamber12 Wafer Transfer 10.0 10.0 4 Sputtering deposition Tadeposition 40.0 40.0 chamber A (1PVD)13A 5 Transfer chamber12 WaferTransfer 10.0 10.0 6 Sputtering deposition PtMn deposition 80.0 180.0chamber B (5PVD)13B CoFe deposition 25.0 Ru deposition 25.0 CoFeBdeposition 50.0 7 Transfer chamber12 Wafer Transfer 10.0 10.0 8Sputtering deposition MgO deposition 60.0 60.0 chamber C (1PVD)13C 9Transfer chamber12 Wafer Transfer 10.0 10.0 10 Sputtering depositionCoFeB deposition 50.0 145.0 chamber D (5PVD)13D Ta deposition 25.0 Rudeposition 70.0 11 Transfer chamber12 Wafer Transfer 10.0 10.0 12Sputtering deposition Ta deposition 100.0 100.0 chamber E (1PVD)13E 13Transfer chamber12 Wafer Transfer 10.0 10.0 Total time 675.0 675.0Throughput = 20.0

Along the process time table of Table 1, there will be explained a filmforming sequence of the tunnel magneto-resistance element described inFIG. 5. An unprocessed substrate 25 is transferred into the etchingchamber 14 from the load lock chamber 15A by the use of the substratetransfer robot 11A (process 1 of Table 1), oxide and contamination onthe substrate 25 surface are removed by reverse sputtering etching inthe etching chamber 14 (process 2 of Table 1). Next, the substrate 25 isplaced on the placement stage 35 within the transfer chamber 12 by thesubstrate transfer robot 11A (process 3 of Table 1). Next, the substrate25 is transferred into the sputtering deposition chamber 13A by thesubstrate transfer robot 11B and a Ta layer having a film thickness of20 nm is deposited over the substrate 25 as a foundation layer (process4 of Table 1). Next, the substrate 25 on which the Ta layer is depositedis transferred into the sputtering deposition chamber 13B by thesubstrate transfer robot 11B (process 5 of Table 1), and, over thesubstrate 25, a PtMn layer 42 of anti-ferromagnetic material isdeposited in 15 nm, and successively a CoFe layer 43 of ferromagneticmaterial is deposited in 2.5 nm, a Ru layer 44 of non-magnetic materialis deposited in 0.9 nm, and a CoFeB layer 45 of ferromagnetic materialis deposited in 3 nm (process 6 of Table 1). Next, the substrate 25 istransferred into the sputtering deposition chamber 13C by the substratetransfer robot 11B (process 7 of Table 1) and an MgO layer 46 of oxideis deposited in 1.2 nm (process 8 of Table 1). Next, the substrate 25 istransferred into the sputtering deposition chamber 13D by the substratetransfer robot 11B (process 9 of Table 1), a CoFeB layer 47 is depositedagain over the substrate 25 in 3 nm and a Ta layer 48 is depositedthereover in a very small thickness of 1.5 nm, and then a Ru layer 49 of10 nm and the Ta layer 50 of 50 nm are deposited (process 10 of Table1). Next, the substrate 25 is transferred into the sputtering depositionchamber 13E by the substrate transfer robot 11B (process 11 of Table 1),a Ta layer 50 of 50 nm is deposited (process 12 of Table 1). Next, thesubstrate 25 is transferred into the load lock chamber 15B by thesubstrate transfer robot 11A (process 13 of Table 1).

As shown in the process time table of FIG. 1, the process chamberrequiring the longest takt time is the sputtering deposition chamber 13Band the takt time is 180 seconds. Throughput is limited by this takttime and a derived throughput is 20 wafers/hour. Here, in the presentspecification, “takt time” means a time after a substrate has beentransferred into some chamber until the substrate is transferred out ofthe some chamber after processing. Further, in the presentspecification, throughput means substrate work volume which can beprocessed within a unit time.

As described above, each of the sputtering deposition chamber 13B andthe sputtering deposition chamber 13D has the sputtering cathode 31 forbackup, and, therefore, targets of PtMn and Ru can be attached to thecathodes 31 of the chambers 13B and 13D, respectively, and aco-sputtering method of discharging the two sputtering cathodes 31 atthe same time can be utilized. Thereby, a film deposition rate isincreased twice and it is possible to reduce deposition time to one halffor PtMn in process 6 of Table 1 and for Ru in process 10 of Table 1.

TABLE 2 [sec] Pro- Process Takt cess Chamber Event time time 1 Transferchamber12 Wafer Transfer 10.0 10.0 2 Etching chamber14 Etching 80.0 80.03 Transfer chamber12 Wafer Transfer 10.0 10.0 4 Sputtering deposition Tadeposition 40.0 40.0 chamber A (1PVD)1 5 Transfer chamber12 WaferTransfer 10.0 10.0 6 Sputtering deposition PtMn deposition* 40.0 140.0chamber B (5PVD)1 CoFe deposition 25.0 Ru deposition 25.0 CoFeBdeposition 50.0 7 Transfer chamber12 Wafer Transfer 10.0 10.0 8Sputtering deposition MgO deposition 60.0 60.0 chamber C (1PVD)1 9Transfer chamber12 Wafer Transfer 10.0 10.0 10 Sputtering depositionCoFeB deposition 50.0 110.0 chamber D (5PVD)1 Ta deposition 25.0 Rudeposition* 35.0 11 Transfer chamber12 Wafer Transfer 10.0 10.0 12Sputtering deposition Ta deposition 100.0 100.0 chamber E (1PVD)1 13Transfer chamber12 Wafer Transfer 10.0 10.0 Total time 600.0 600.0*co-sputtering Throughput = 25.7

The process time table in this case is specified by process 6 andprocess 10 of above Table 2, and the takt time for the sputteringdeposition chamber 13B is reduced from 180 seconds to 140 seconds andthe takt time for the sputtering deposition chamber 13D is reduced from145 seconds to 110 seconds, although the sputtering deposition chamber13B still limits the takt times. Accordingly, the throughput is improvedto 25.7 wafers/hour.

As a comparative example, Table 3 shows a time table when the tunnelmagneto-resistance element described in FIG. 5 is formed by the use ofthe sputtering apparatus described in Patent Literature 1.

TABLE 3 [sec] Pro- Process Takt cess Chamber Event time time 1 Transferchamber Wafer Transfer 10.0 10.0 2 Etching chamber Etching 80.0 80.0 3Transfer chamber Wafer Transfer 10.0 10.0 4 Sputtering deposition Tadeposition* 60.0 100.0 chamber A (4PVD) PtMn deposition* 40.0 5 Transferchamber Wafer Transfer 10.0 10.0 6 Sputtering deposition CoFe deposition25.0 125.0 chamber B (4PVD) Ru deposition 25.0 CoFeB deposition 50.0 Mgdeposition 25.0 7 Transfer chamber Wafer Transfer 10.0 10.0 8 Oxidationchamber Oxidation 90.0 90.0 9 Transfer chamber Wafer Transfer 10.0 10.010 Sputtering deposition CoFeB deposition 50.0 295.0 chamber C (4PVD) Tadeposition 25.0 Ru deposition 70.0 Ta deposition* 150.0 11 Transferchamber Wafer Transfer 10.0 10.0 Total time 750.0 750.0 *co-sputteringThroughput = 12.2

As shown in above Table 3, the takt time for the sputtering depositionchamber C is 295 seconds and the throughput is 12.2. Note that, alsowhen the position of the process chamber is switched in the apparatusconfiguration diagram 1, the throughputs shown in Table 1 and Table 2are maintained only if the sputtering targets are disposed so as torealize the sequential substrate 25 transfer.

Second Embodiment

The same effect can be obtained also when the sputtering depositionchamber for MgO film deposition in the first embodiment is replaced by adeposition chamber using a chemical vapor deposition method.

Third Embodiment

FIG. 6 is a diagram showing a manufacturing apparatus according toanother embodiment of the present invention which is applied forfabricating the tunnel magneto-resistance element shown in FIG. 5. To atransfer chamber 12 including three substrate transfer robots 11A, 11Band 11C as a substrate transfer mechanism, there are connected sevensputtering deposition chambers of reference numerals 13A to 13G, anetching chamber 14 for removing oxide and contamination on a substrate25 surface by reverse sputtering etching, and two load lock chambers 15Aand 15B. Among the sputtering deposition chambers 13A to 13G, thesputtering deposition chamber 13C includes five sputtering cathodes andthe sputtering deposition chamber 13E includes two sputtering cathodes.On the other side, each of the sputtering deposition chambers 13A, 13B,13D, 13F and 13G includes one sputtering cathode. A first sputteringdeposition chamber including two or more cathodes (sputtering depositionchamber 13C or 13E) is used for forming the above magnetization fixinglayer, the above magnetization free layer, or a partial layer (Ta layer47) of the above protection layer. A second sputtering depositionchamber including one sputtering cathode (sputtering deposition chamber13A, 13B, 13D, 13F or 13G) is used for forming the above foundationlayer, the above anti-ferromagnetic layer, the above non-magneticinsulating layer and a layer other than the partial layer (Ta layer 50)of the above protection layer. A process chamber (etching chamber 14) isused for etching. Note that the first sputtering deposition chamber mayinclude two or more targets made of the same material for performingco-sputtering.

A Ta target is attached to the sputtering deposition chamber 13A, a PtMntarget is attached to the sputtering deposition chamber 13B, and a CoFetarget, a Ru target, and two CoFeM targets 31 are attached to thesputtering deposition chamber 13C and the remaining one cathode is leftvacant for backup. The two CoFeB targets 31 are used for theco-sputtering. An MgO target is attached to the sputtering depositionchamber 13D, a CoFeB target and a Ta target are attached to thesputtering deposition chamber 13E, and one Ta target is attached to eachof the sputtering deposition chambers 13F and 13G.

A process time table in the present embodiment is shown in Table 4.

TABLE 4 [sec] Pro- Process Takt cess Chamber Event time time 1 Transferchamber 114 Wafer Transfer 10 10 2 Second vacuum chamber 112 Etching 8080 3 Transfer chamber 114 Wafer Transfer 10 10 4 First vacuum chamber110 Ta deposition 40 40 5 Transfer chamber 114 Wafer Transfer 10 10 6Second vacuum chamber 112 PtMn deposition 80 205 7 Second vacuum chamber112 CoFe deposition 25 8 Second vacuum chamber 112 Ru deposition 25 9Second vacuum chamber 112 CoFeB deposition 50 10 Second vacuum chamber112 Mg deposition 25 11 Transfer chamber 114 Wafer Transfer 10 10 12Process chamber Oxidation 90 90 13 Transfer chamber 114 Wafer Transfer10 10 14 Second vacuum chamber 112 CoFeB deposition 50 50 15 Transferchamber 114 Wafer Transfer 10 10 16 First vacuum chamber 110 Tadeposition 25 25 17 Transfer chamber 114 Wafer Transfer 10 10 18 Secondvacuum chamber 112 Ru deposition 70 70 19 Transfer chamber 114 WaferTransfer 10 10 20 First vacuum chamber 110 Ta deposition 150 150 21Transfer chamber 114 Wafer Transfer 10 10 Total time 800 800 Throughput= 8.8

Along the process time table of above Table 4, there will be explained afilm forming sequence of the tunnel magneto-resistance element describedin FIG. 5. An unprocessed substrate 25 is transferred into the etchingchamber 14 from the load lock chamber 15A by the substrate transferrobot 11A (process 1 of Table 4), oxide and contamination on thesubstrate 25 surface are removed in the etching chamber 14 by reversesputtering etching (process 2 of Table 4). Next, the substrate 25 isplaced on a placement stage 35A in the transfer chamber 12 by thesubstrate transfer robot 11A (process 3 of Table 4). Next, the substrate25 is transferred into the sputtering deposition chamber 13A by thesubstrate transfer robot 11B and a Ta layer 41 is deposited over thesubstrate 25 having a film thickness of 20 nm as a foundation layer(process 4 of Table 4). Next, the substrate 25 is placed on a placementstage 35B in the transfer chamber 12 by the substrate transfer robot 11B(process 5 of Table 4). Next, a PtMn layer 42 is deposited over thesubstrate 25 having a film thickness of 15 nm as anti-ferromagneticmaterial by a sputtering method (process 6 of Table 4). Next, thesubstrate 25 is transferred into the sputtering deposition chamber 13Cby the substrate transfer robot 11C (process 7 of Table 4), and a CoFeBlayer 45 of ferromagnetic material and an MgO layer 46 of oxide aredeposited over the substrate 25 in 3 nm and 1.2 nm, respectively, and aCoFeB layer 45 of ferromagnetic material is deposited having a filmthickness of 3 nm by the co-sputtering method (process 8 of Table 4).

Next, the substrate 25 is transferred into the sputtering depositionchamber 13D by the substrate transfer robot 11C (process 9 of Table 4),and an MGO layer 46 of oxide is deposited over the substrate 25 in 1.2nm by a sputtering method (process 10 of Table 4). Next, the substrate25 is transferred into the sputtering deposition chamber 13E by thesubstrate transfer robot 11C (process 11 of Table 4), and a CoFeB layer47 of ferromagnetic material is deposited again in 3 nm and a very thinTa layer 48 is deposited thereover in 1.5 nm (process 12 of Table 4).Next, the substrate 25 is transferred into the sputtering depositionchamber 13F by the substrate transfer robot 11B (process 13 of Table 4),and a Ru layer 49 is deposited in 10 nm (process 14 of Table 4). Next,the substrate 25 is transferred into the sputtering deposition chamber13G by the substrate transfer robot 11B (process 15 of Table 4), and aTa layer 50 is deposited in 50 nm (process 16 of Table 4). Next, thesubstrate 25 is transferred into the load lock chamber 15B by thetransfer robot 11A (process 17 of Table 4).

When the tunnel magneto-resistance element described in FIG. 5 is formedalong the process time table of Table 5 in this manner, the takt timefor each of the chambers is made further uniform and the takt time forthe sputtering deposition chamber B which has the longest takt time is100 seconds. Since the sequential substrate transfer is realized in theapparatus configuration shown in FIG. 6, the derived throughput isimproved to 36 wafers/hour. Note that, also when the position of theprocess chamber is switched in the apparatus configuration diagram 6,the throughput shown in Table 4 is maintained only if the sputteringtargets are disposed so as to realize the sequential substrate transfer.

First Comparative Example

As a first comparative example, there will be shown a time table inTable 5 when the tunnel magneto-resistance element described in FIG. 5is formed by the use of the sputtering apparatus described in PatentLiterature 4.

TABLE 5 [sec] Pro- Process Takt cess Chamber Event time time 1 Transferchamber 114 Wafer Transfer 10 10 2 Second vacuum chamber 112 Etching 8080 3 Transfer chamber 114 Wafer Transfer 10 10 4 First vacuum chamber110 Ta deposition 40 40 5 Transfer chamber 114 Wafer Transfer 10 10 6Second vacuum chamber 112 PtMn deposition 80 205 7 Second vacuum chamber112 CoFe deposition 25 8 Second vacuum chamber 112 Ru deposition 25 9Second vacuum chamber 112 CoFeB deposition 50 10 Second vacuum chamber112 Mg deposition 25 11 Transfer chamber 114 Wafer Transfer 10 10 12Process chamber Oxidation 90 90 13 Transfer chamber 114 Wafer Transfer10 10 14 Second vacuum chamber 112 CoFeB deposition 50 50 15 Transferchamber 114 Wafer Transfer 10 10 16 First vacuum chamber 110 Tadeposition 25 25 17 Transfer chamber 114 Wafer Transfer 10 10 18 Secondvacuum chamber 112 Ru deposition 70 70 19 Transfer chamber 114 WaferTransfer 10 10 20 First vacuum chamber 110 Ta deposition 150 150 21Transfer chamber 114 Wafer Transfer 10 10 Total time 800 800 Throughput= 8.8

Originally, in the sputtering deposition chamber described in PatentLiterature 4, only one target material (Ta) is disposed in the firstvacuum chamber 110. Accordingly, when the tunnel magneto-resistanceelement described in FIG. 5 is tried to be formed by the use of asputtering apparatus of the sputtering apparatus described in PatentLiterature 4, the layers other than the Ta layer need to be deposited bythe vacuum chamber 112. Further, the sputtering apparatus described inPatent Literature 4 does not include a process chamber which performs aprocess other than sputtering, and therefore cannot perform process ofabove Table 5 (oxidation process). Accordingly, above Table 5 assumes acase that the tunnel magneto-resistance element described in FIG. 5 isformed by the manufacturing apparatus of FIG. 1 in which a processchamber is provided for the sputtering apparatus described in PatentLiterature 4. The takt time of the sputtering apparatus described inPatent Literature 4 (total time for the second vacuum chamber 112 in thecase of Patent Literature 4) is 405 seconds and the throughput is 8.8(wafers/hour). Clearly this throughput is considerably worse than thatof the apparatus configuration of FIG. 1 according to an embodiment ofthe present invention. Further, in the case of the sputtering apparatusdescribed in Patent Literature 4, a substrate is transferred twice intothe same process chamber in a series of the film deposition processesand therefore so-called sequential substrate transfer cannot berealized.

Second Comparative Example

As a second comparative example, there will be shown a process timetable in Table 6 when the tunnel magneto-resistance element described inFIG. 5 is formed by the use of the sputtering apparatus described inPatent Literature 5.

A process time table for the sputtering apparatus described in PatentLiterature 5 is shown in Table 6.

TABLE 6 [sec] Pro- Process Takt cess Chamber Event time time 1 Transferchamber Wafer Transfer 10.0 10.0 2 Etching chamber Etching 80.0 80.0 3Transfer chamber Wafer Transfer 10.0 10.0 4 First single target DC Tadeposition 40.0 40.0 magnetron sputtering module 5 Transfer chamberWafer Transfer 10.0 10.0 6 Multi-target DC PtMn deposition 80.0 180.0sputtering module CoFe deposition 25.0 Ru deposition 25.0 CoFeBdeposition 50.0 7 Transfer chamber Wafer Transfer 10.0 10.0 8Multi-target ion beam MgO deposition 300.0 445.0 sputtering module CoFeBdeposition 50.0 Ta deposition 25.0 Ru deposition 70.0 9 Transfer chamberWafer Transfer 10.0 10.0 10 Second single target DC Ta deposition 100.0100.0 magnetron sputtering module 11 Transfer chamber Wafer Transfer10.0 10.0 Total time 905.0 905.0 Throughput = 8.1

Originally, the sputtering system 600 disclosed in Patent Literature 5does not include a process chamber which performs a process other thansputtering, and therefore cannot perform oxidation process. Further, forrealizing so-called sequential substrate transfer by the use of thesputtering system 600 disclosed in Patent Literature 5, all the filmdepositions of MgO to CoFeM, Ta, and Ru in above Table 6 need to beperformed by the multi-target ion-beam sputtering module 608. In thiscase, in addition to the MgO film deposition which requires long timebecause of a low sputtering rate, three metal layers are deposited inthe same chamber, and therefore the takt time becomes 445.0 seconds andthe throughput becomes 8.1 wafers/hour. Further, deposition of oxide andmetal in the same chamber causes oxygen contamination in the metal layerand causes a so-called cross contamination problem which degrades filmcharacteristics. Accordingly, also by the use of the sputtering system600 disclosed in Patent Literature 5, it is not possible to realizeso-called sequential substrate transfer and to improve throughput.

1. A manufacturing apparatus growing a multi-layered film as amagneto-resistance element over a substrate, comprising: a transferchamber including a substrate transfer mechanism; a first sputteringdeposition chamber including one sputtering cathode; a second sputteringdeposition chamber including one sputtering cathode; a third sputteringdeposition chamber including one sputtering cathode; a fourth sputteringdeposition chamber including two or more sputtering cathodes; a fifthsputtering deposition chamber including two or more sputtering cathodes;and a process chamber for performing a process other than sputtering,wherein the first sputtering deposition chamber, the second sputteringdeposition chamber, the third sputtering deposition chamber, the fourthsputtering deposition chamber, the fifth sputtering deposition chamber,and the process chamber are arranged around the transfer chamber so thateach is able to perform delivery and receipt of the substrate with thetransfer chamber, and wherein the first sputtering deposition chamberdeposits at least one layer of an oxide film, a nitride film, and asemiconductor film included in the multi-layered film.
 2. Amanufacturing apparatus growing a multi-layered film as amagneto-resistance element over a substrate, comprising: a transferchamber including a substrate transfer mechanism; a first sputteringdeposition chamber including one sputtering cathode; a second sputteringdeposition chamber including one sputtering cathode; a third sputteringdeposition chamber including one sputtering cathode; a fourth sputteringdeposition chamber including two or more sputtering cathodes; a fifthsputtering deposition chamber including two or more sputtering cathodes;and a process chamber for performing a process other than sputtering,wherein the first sputtering deposition chamber, the second sputteringdeposition chamber, the third sputtering deposition chamber, the fourthsputtering deposition chamber, the fifth sputtering deposition chamber,and the process chamber are arranged around the transfer chamber so thateach is able to perform delivery and receipt of the substrate with thetransfer chamber, wherein the multi-layered film includes a first filmthat includes a metal film having a thickness not smaller than 10 nm, asecond film that includes a metal film having a thickness not smallerthan 10 nm, and a third film that includes at least one layer of anoxide film, a nitride film, and a semiconductor film, and wherein thefirst sputtering deposition chamber forms the first film and the secondsputtering deposition chamber forms the second film.
 3. Themanufacturing apparatus according to claim 1, wherein the transferchamber includes a substrate transfer robot for transferring thesubstrate between the transfer chamber and the first to fifth depositionchambers.
 4. The manufacturing apparatus according to claim 1, whereinthe transfer chamber is maintained in a vacuum.
 5. The manufacturingapparatus according to claim 1, wherein the process chamber is one forremoving a thin film formed on or over the substrate, with plasma, anion beam, an atom beam, a molecular beam, or a gas cluster beam.
 6. Themanufacturing apparatus according to claim 1, wherein the processchamber is one for forming a thin film on a thin film formed on or overthe substrate, by a chemical vapor deposition method.
 7. Themanufacturing apparatus according to claim 1, wherein the processchamber is one for causing a thin film formed on or over the substrateto chemically react in gas, neutral active species, ions, or a mixedatmosphere thereof.
 8. The manufacturing apparatus according to claim 1,wherein the process chamber is one for heating, cooling, or heating andcooling the substrate.
 9. The manufacturing apparatus according to claim1, wherein the first sputtering deposition chamber forms an oxide filmincluded in the multi-layered film.
 10. The manufacturing apparatusaccording to claim 2, wherein the third sputtering deposition chamberforms the third film.
 11. The manufacturing apparatus according to claim1, wherein the multi-layered film further includes a magnetizationfixing layer and a magnetization free layer which includes a pluralityof films, the magnetization fixing layer and the magnetization freelayer being disposed so as to sandwich at least one layer of the oxidefilm, the nitride film, and the semiconductor film, wherein the fourthsputtering deposition chamber forms a plurality of films and deposits atleast the magnetization fixing layer, and wherein the fifth sputteringdeposition chamber forms a plurality of films and deposits at least themagnetization free layer.
 12. The manufacturing apparatus according toclaim 2, wherein the multi-layered film further includes a magnetizationfixing layer and a magnetization free layer which includes a pluralityof films, the magnetization fixing layer and the magnetization freelayer being disposed so as to sandwich the third film, wherein thefourth sputtering deposition chamber forms a plurality of films anddeposits at least the magnetization fixing layer, and wherein the fifthsputtering deposition chamber forms a plurality of films and deposits atleast the magnetization free layer.
 13. A manufacturing apparatusgrowing a multi-layered film as a magneto-resistance element over asubstrate, comprising: a transfer chamber including a substrate transfermechanism; a first sputtering deposition chamber including onesputtering cathode; a second sputtering deposition chamber including onesputtering cathode; a third sputtering deposition chamber including onesputtering cathode; a fourth sputtering deposition chamber including twoor more sputtering cathodes; a fifth sputtering deposition chamberincluding two or more sputtering cathodes; and a process chamber forperforming a process other than sputtering, wherein the first sputteringdeposition chamber, the second sputtering deposition chamber, the thirdsputtering deposition chamber, the fourth sputtering deposition chamber,the fifth sputtering deposition chamber, and the process chamber arearranged around the transfer chamber so that each is able to performdelivery and receipt of the substrate with the transfer chamber, whereinthe multi-layered film includes a first film that includes a metal filmhaving a thickness larger in a different order of magnitude than thethinnest film in the multi-layered film, a second film that includes ametal film having a thickness larger in a different order of magnitudethan the thinnest film, and a third film that includes at least onelayer of an oxide film, a nitride film, and a semiconductor film, andwherein the first sputtering deposition chamber forms the first film andthe second sputtering deposition chamber forms the second film.
 14. Themanufacturing apparatus according to claim 13, wherein the thirdsputtering deposition apparatus forms the third film.